6533b855fe1ef96bd12b1bda
RESEARCH PRODUCT
Carbon Nanotube Radio-Frequency Single-Electron Transistor
Pertti HakonenWang Tai-hongMarkus AhlskogMika SillanpääLeif RoschierSumio Iijimasubject
Materials sciencebusiness.industryTransistorCoulomb blockadeNanotechnologyCharge (physics)Carbon nanotubeCondensed Matter PhysicsNoise (electronics)Atomic and Molecular Physics and Opticslaw.inventionCarbon nanotube field-effect transistorlawPlasma-enhanced chemical vapor depositionOptoelectronicsGeneral Materials ScienceRadio frequencybusinessdescription
We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.
year | journal | country | edition | language |
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2004-09-01 | Journal of Low Temperature Physics |