6533b855fe1ef96bd12b1bda

RESEARCH PRODUCT

Carbon Nanotube Radio-Frequency Single-Electron Transistor

Pertti HakonenWang Tai-hongMarkus AhlskogMika SillanpääLeif RoschierSumio Iijima

subject

Materials sciencebusiness.industryTransistorCoulomb blockadeNanotechnologyCharge (physics)Carbon nanotubeCondensed Matter PhysicsNoise (electronics)Atomic and Molecular Physics and Opticslaw.inventionCarbon nanotube field-effect transistorlawPlasma-enhanced chemical vapor depositionOptoelectronicsGeneral Materials ScienceRadio frequencybusiness

description

We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.

https://doi.org/10.1023/b:jolt.0000041278.59298.73