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RESEARCH PRODUCT
Role of excitons in double Raman resonances in GaAs quantum wells
J. M. CallejaJ.a.a.j. PerenboomTos T. J. M. BerendschotAndrés CantareroLuis ViñaK. H. PloogAna Crossubject
PhysicsPhonon scatteringCondensed matter physicsCondensed Matter::OtherScatteringScattering lengthCorrelated Electron Systems / High Field Magnet Laboratory (HFML)02 engineering and technologyCondensed Matter::Mesoscopic Systems and Quantum Hall Effect021001 nanoscience & nanotechnology01 natural sciencesScattering amplitudeCondensed Matter::Materials Sciencesymbols.namesakeX-ray Raman scattering0103 physical sciencesPrincipal quantum numbersymbolsScattering theoryAtomic physics010306 general physics0210 nano-technologyGeneralLiterature_REFERENCE(e.g.dictionariesencyclopediasglossaries)Raman scatteringdescription
Raman scattering by longitudinal-optical phonons has been measured in GaAs-AlAs multiple quantum wells at high magnetic fields. Doubly resonant scattering processes are observed at photon energies corresponding to magneto-excitons with different principal quantum numbers for the incoming and outgoing channels. The existence of these initially forbidden scattering processes, their resonance energies, and their relative intensities are correctly reproduced by our theoretical description. The model takes into account the excitonic nature of the intermediate states, as well as scattering processes involving a nonzero in-plane phonon wave vector, which is required to allow inter-Landau level scattering of the exciton.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1996-02-15 | Physical Review B |