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RESEARCH PRODUCT

Oxide or carbide nanoparticles synthesized by laser ablation of a bulk Hf target in liquids and their structural, optical, and dielectric properties

M. AssoulG. MonteilN. G. SemaltianosRémi ChassagnonJean-michel FriedtVirginie Blondeau-patissierVirginie MoutarlierG. Combe

subject

PermittivityMaterials scienceThin filmsInorganic chemistryAnalytical chemistryGeneral Physics and AstronomyNanoparticlePlasma sources02 engineering and technology010402 general chemistry01 natural sciences7. Clean energyLaser ablation synthesis in solutionNanocompositesPulsed laser depositionCarbideAbsorption spectroscopy[CHIM]Chemical SciencesThin filmLaser ablationbiologyCrystal structure[SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph]021001 nanoscience & nanotechnologyHafniabiology.organism_classificationLaser ablationX-ray diffraction0104 chemical sciencesDielectric propertiesNanoparticlesSet theory0210 nano-technology

description

International audience; Laser ablation of a bulk Hf target in deionized (DI) water, ethanol, or toluene was carried out for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation plasma plume species with the species which are produced by the liquid decomposition at the plume-liquid interface, hafnia (HfO2) nanoparticles are synthesized in DI water, hafnium carbide (HfC) nanoparticles in toluene, and a mixture of these in ethanol. The hafnia nanoparticles are in the monoclinic low temperature phase and in the tetragonal and fcc high temperature phases. Their size distribution follows log-normal function with a median diameter in the range of 4.3–5.3 nm. Nanoparticles synthesized in DI water have band gaps of 5.6 and 5.4 eV, in ethanol 5.72 and 5.65 eV (using low and high pulse energy), and in toluene 3 eV. The values for the relative permittivity in the range of 7.74–8.90 were measured for hafnia nanoparticles' thin films deposited on substrates by drop-casting (self-assembled layers) in parallel plate capacitor structures.

https://doi.org/10.1063/1.4951740