6533b82dfe1ef96bd12915a7
RESEARCH PRODUCT
Phosphites as precursors in atomic layer deposition thin film synthesis
Ola NilsenKristian Breivik KvammeTimo SajavaaraKristian WeibyeAmund Ruudsubject
Materials scienceIon beam analysisfosfaatitVapor pressureSurfaces and InterfacesQuartz crystal microbalanceatomikerroskasvatusCondensed Matter PhysicsSurfaces Coatings and FilmsAtomic layer depositionX-ray photoelectron spectroscopyChemical engineeringfosfiititOxidation stateDeposition (phase transition)ohutkalvotThin filmdescription
We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence, and ion beam analysis for composition analysis, spectroscopic ellipsometry for thickness, and FTIR for local structure. peerReviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-05-01 |