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RESEARCH PRODUCT
Growth and characterization of AP-MOCVD iron doped titanium dioxide thin films
M. SacilottiSylvie BourgeoisP. SibillotV. GauthierMario Maglionesubject
Materials scienceDopantInorganic chemistryMetals and Alloyschemistry.chemical_elementSurfaces and InterfacesChemical vapor depositionSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsTitanium oxidechemistry.chemical_compoundchemistryChemical engineeringX-ray photoelectron spectroscopyTitanium dioxideMaterials ChemistryTexture (crystalline)Thin filmTitaniumdescription
Abstract Atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) was used to prepare iron doped titanium dioxide thin films. Thin films, between 40 and 150 nm thick, were deposited on Si, SiO 2 and Al 2 O 3 substrates using titanium tetra isopropoxide and ferrocene as metal organic precursors. TiO 2 iron doping was achieved in the range of 1–4 at.%. The film morphology and thickness, polycrystalline texture and doping content were studied using respectively scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The influence of growth temperature, deposition time, substrate type and dopant partial pressure were studied. Electrical characterizations of the films were also performed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1999-02-01 | Thin Solid Films |