6533b82efe1ef96bd1293031

RESEARCH PRODUCT

Study of the MOCVD growth of ZnO on GaAs substrates: Influence of the molar ratio of the precursors on structural and morphological properties

Vicente Muñoz-sanjoséSaid AgouramJ.a. Bastos-segura

subject

CrystallinityMorphology (linguistics)Materials scienceAtmospheric pressureChemical engineeringScanning electron microscopeGeneral Materials ScienceSubstrate (electronics)Chemical vapor depositionMetalorganic vapour phase epitaxyElectrical and Electronic EngineeringThin filmCondensed Matter Physics

description

Abstract ZnO thin films were grown by metal-organic chemical vapour deposition (MOCVD) on GaAs(100) and GaAs(111)A substrates. The growth experiments were performed at temperatures ranging from 290 to 500 ∘C and atmospheric pressure. Diethylzinc (DEZn) and tertiary butanol (tBuOH) were used as Zn and O precursors, respectively. The crystallinity of the grown films was studied by X-Ray Diffraction (XRD) and the thickness and morphology were investigated by Scanning Electron Microscopy (SEM). The influence of substrate orientation and molar ratio of the precursors on the crystalline orientation and morphology of the ZnO grown films was analysed.

yearjournalcountryeditionlanguage
2007-07-01Superlattices and Microstructures
https://doi.org/10.1016/j.spmi.2007.05.002