6533b82efe1ef96bd1293ab8
RESEARCH PRODUCT
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
Robert A. JohnsonPartha S. ChakrabortyRonald D. SchrimpfRobert R. ArslanbekovDennis R. BallArto JavanainenMicheal L. AllesAndrew L. SternbergKenneth F. GallowayRobert A. ReedArthur F. WitulskiJean-marie LauensteinAshok Ramansubject
Nuclear and High Energy PhysicsMaterials science010308 nuclear & particles physicsbusiness.industrySchottky diode01 natural sciencesIonchemistry.chemical_compoundReverse leakage currentNuclear Energy and Engineeringchemistry0103 physical sciencesSilicon carbideOptoelectronicsBreakdown voltageIrradiationElectrical and Electronic EngineeringbusinessDiodeVoltagedescription
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2020-01-01 | IEEE Transactions on Nuclear Science |