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RESEARCH PRODUCT
Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films
Aile TammMarianna KemellTimo SajavaaraKaupo KukliKaupo KukliVäino SammelselgMassimo TallaridaMikko RitalaJekaterina KozlovaMarkku Leskeläsubject
Materials scienceAnnealing (metallurgy)Inorganic chemistryOxideAnalytical chemistrychemistry.chemical_elementEquivalent oxide thickness02 engineering and technology01 natural scienceslaw.inventionErbiumchemistry.chemical_compoundAtomic layer depositionlaw0103 physical sciencesMaterials ChemistryElectrochemistryThin filmCrystallization010302 applied physicsRenewable Energy Sustainability and the EnvironmentDoping021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry0210 nano-technologydescription
ZrO 2 films doped with Er 2 O 3 were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium, and ozone as precursors at 350°C. The erbium content was 1―5 cation %. The films were uniform in thickness. The ZrO 2 :Er 2 O 3 films were crystallized already in the as-deposited state. Upon annealing at 650°C, they were stabilized in the form of cubic or tetragonal polymorph of ZrO 2 . Enhancement in capacitance required intense crystallization that was observed when the film thickness exceeded 4.4 nm. The permittivity of the ZrO 2 :Er 2 O 3 films could reach 31. The capacitors based on the doped ZrO 2 possessed lower capacitance equivalent oxide thickness compared to the nondoped ZrO 2 and also comparable leakage current densities.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2010-01-01 | Journal of The Electrochemical Society |