Nanostructured Coating for Aluminum Alloys Used in Aerospace Applications
The authors would like to acknowledge the Estonian Ministry of Education and Research by granting the projects IUT2–24, TLTFY14054T, PSG448, PRG4, SLTFY16134T and by the EU through the European Regional Development Fund under project TK141 (2014-2020.4.01.15-00). The atomic oxygen testing was performed in the framework of the “Announcement of opportunity for atomic oxygen in the ESTEC Materials and Electrical Components Laboratory/ESA-TECQE-AO-013375),” through a collaboration with Picosun Oy. The authors also thank Dr. Elo Kibena-Põldsepp for the electrodeposition of Ag onto the anodized substrates.
Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films
ZrO 2 films doped with Er 2 O 3 were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium, and ozone as precursors at 350°C. The erbium content was 1―5 cation %. The films were uniform in thickness. The ZrO 2 :Er 2 O 3 films were crystallized already in the as-deposited state. Upon annealing at 650°C, they were stabilized in the form of cubic or tetragonal polymorph of ZrO 2 . Enhancement in capacitance required intense crystallization that was observed when the film thickness exceeded 4.4 nm. The permittivity of the ZrO 2 :Er 2 O 3 films could reach 31. The capacitors based on the doped ZrO 2 possessed l…