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RESEARCH PRODUCT

Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

Arto JavanainenMarek TurowskiKenneth F. GallowayHenrique Vázquez MuíñosFlyura DjurabekovaKai NordlundRonald D. Schrimpf

subject

mallintaminenMaterials sciencePOWER DIODESSchottky diodesSINGLE-EVENT BURNOUT114 Physical sciences01 natural sciencesIonpower semiconductor devicesBARRIER DIODESTHERMAL-DAMAGEchemistry.chemical_compoundMolecular dynamicspuolijohteetsilicon carbide0103 physical sciencesSilicon carbideIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and Quality010302 applied physicsta114ta213ionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilyINORGANIC INSULATORSSchottky diodemodelingHeavy ion irradiationIRRADIATIONElectronic Optical and Magnetic MaterialschemistryionsOptoelectronicsDegradation (geology)Heavy ionbusinession radiation effects

description

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed

yearjournalcountryeditionlanguage
2018-09-01IEEE Transactions on Device and Materials Reliability
10.1109/tdmr.2018.2842253https://doi.org/10.1109/TDMR.2018.2842253