6533b830fe1ef96bd12967d1

RESEARCH PRODUCT

Deposition of tin sulfide thin films from tin(iv) thiolate precursors

Kieran C. MolloyIvan P. ParkinMark FieldGiampaolo BaroneAmanda M. E. HardyLouise S. PriceMary F. MahonT. G. Hibbert

subject

tin sulfidestin thiolatesMössbauer spectroscopybusiness.industryChemistryInorganic chemistrychemistry.chemical_elementGeneral ChemistryChemical vapor depositionDecompositionSemiconductorchemical vapour depositionSettore CHIM/03 - Chimica Generale E InorganicaX-ray crystallographyMaterials ChemistryThin filmbusinessElectronic band structureTinDeposition (chemistry)thermal decomposition

description

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

yearjournalcountryeditionlanguage
2001-01-01Journal of Materials Chemistry
https://doi.org/10.1039/b005888m