6533b830fe1ef96bd129717b
RESEARCH PRODUCT
Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface
Dávid ForgácsHenk J. BolinkLionel HirschGuillaume WantzDario M. BassaniM. WusslerWolfram JaegermannRaphael ClercYan-fang ChenYu-tang Tsaisubject
Materials scienceCondensed matter physicsRenewable Energy Sustainability and the Environmentbusiness.industry02 engineering and technologyGeneral ChemistryTrappingElectron010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesSemiconductorBand bendingCondensed Matter::SuperconductivityElectrodeGeneral Materials Science[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsCrystalliteAtomic physics[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics0210 nano-technologybusinessQuantum tunnellingPerovskite (structure)description
International audience; Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-12-01 |