6533b830fe1ef96bd1297984
RESEARCH PRODUCT
Temperature and substrate influence on the structure of TiN O thin films grown by low pressure metal organic chemical vapour deposition
Jérôme GuillotLuc ImhoffP. SibillotF. FabreguetteM.c. Marco De LucasBruno DomenichiniM. SacilottiSylvie Bourgeoissubject
Materials scienceAnalytical chemistrychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryChemical vapor depositionCondensed Matter PhysicsSurfaces Coatings and FilmschemistryX-ray photoelectron spectroscopyX-ray crystallographyMaterials ChemistryMetalorganic vapour phase epitaxyThin filmSpectroscopyTinTitaniumdescription
Abstract This paper presents the growth and characterization of titanium oxinitride (TiN x O y ) films grown by low pressure metal organic chemical vapour deposition (LP-MOCVD). The film nitrogen content, obtained by Rutherford backscattering spectroscopy (RBS), increases as the growth temperature increases (from 23 at.% at 450°C to 46 at.% at 750°C). Below 550°C, the films do not show any X-ray diffraction pattern. Above 550°C, the deposited films present the (111) and (200) TiN textures. Films deposited on (100) Si exhibit a 2 θ shift to higher Bragg angles, depending on the N/O ratio. These shifts are explained by using a substitutional oxygen model. Moreover, the atomic structure of such materials is described from this behaviour in terms of lattice vacancies and N/O substitutions, leading to different titanium valencies confirmed by X-ray photoelectron spectroscopy (XPS) analysis.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-03-01 | Surface and Coatings Technology |