6533b830fe1ef96bd1297c2c
RESEARCH PRODUCT
Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy
B. AlénD. FusterG. Muñoz-matutanoP. Alonso-gonzálezJ. Canet-ferrerJ. Martínez-pastorI. Fernández-martínezM. RoyoJ. I. ClimenteY. GonzálezF. BrionesD. HernándezS. I. MolinaL. GonzálezJisoon IhmHyeonsik Cheongsubject
Materials scienceCondensed matter physicsmedia_common.quotation_subjectNucleationPhysics::OpticsCharge (physics)EpitaxyMolecular physicsAsymmetryQuantum dotElectric fieldArea densityDiffusion (business)media_commondescription
Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.
year | journal | country | edition | language |
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2010-01-01 |