6533b830fe1ef96bd1297c2c

RESEARCH PRODUCT

Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

B. AlénD. FusterG. Muñoz-matutanoP. Alonso-gonzálezJ. Canet-ferrerJ. Martínez-pastorI. Fernández-martínezM. RoyoJ. I. ClimenteY. GonzálezF. BrionesD. HernándezS. I. MolinaL. GonzálezJisoon IhmHyeonsik Cheong

subject

Materials scienceCondensed matter physicsmedia_common.quotation_subjectNucleationPhysics::OpticsCharge (physics)EpitaxyMolecular physicsAsymmetryQuantum dotElectric fieldArea densityDiffusion (business)media_common

description

Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.

10.1063/1.3666433http://hdl.handle.net/10261/103415