6533b830fe1ef96bd1297d3c
RESEARCH PRODUCT
Phonon-plasmon coupling in Si doped GaN nanowires
S Murcia-mascarosElena Rozas-jimenezBruno DaudinZhihua FangZhihua FangAna Crossubject
Materials scienceSiliconPhononNanowirechemistry.chemical_elementPhysics::OpticsGallium nitride02 engineering and technology01 natural scienceschemistry.chemical_compoundsymbols.namesakeCondensed Matter::Materials ScienceOpticsCondensed Matter::Superconductivity0103 physical sciencesGeneral Materials ScienceComputingMilieux_MISCELLANEOUS010302 applied physics[PHYS]Physics [physics]business.industryNanotecnologiaMechanical EngineeringDopingCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter PhysicsEspectroscòpia RamanchemistryMechanics of MaterialssymbolsOptoelectronicsCondensed Matter::Strongly Correlated Electrons0210 nano-technologybusinessRaman spectroscopyExcitationRaman scatteringdescription
Abstract The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon–plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A 1 (LO) mode for all samples. This behavior points to phonon–plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-11-01 |