6533b831fe1ef96bd129840d

RESEARCH PRODUCT

Transparent amorphous memory cell: A bipolar resistive switching in ZnO/Pr0.7Ca0.3MnO3/ITO for invisible electronics application

Y. JiangC. DongXuefeng XuR. ZhangJ. MiaoJ. MiaoF. ShaoW.t. Huang

subject

Materials sciencebusiness.industryCondensed Matter PhysicsSpace chargeElectronic Optical and Magnetic MaterialsPulsed laser depositionAmorphous solidWavelengthMemory cellMaterials ChemistryCeramics and CompositesOptoelectronicsElectronicsThin filmbusinessElectrical conductor

description

Abstract ZnO/Pr0.7Ca0.3MnO3 (ZnO/PCMO) amorphous thin films were grown on an indium-tin-oxide (ITO)/glass by pulsed laser deposition at room temperature. Interestingly, a stable bipolar resistive switching behavior of the ITO/ZnO/PCMO/ITO cell can be longer than 2.5 × 103 cycles. The on/off ratio of switching behaviors is as high as 104. The structure of ITO/ZnO/PCMO/ITO exhibits a high average transparency of 79.6% in the visible range with a maximum transparency of 84.6% at 590 nm wavelength. The conductive mechanism during switching cycling in our structure can be described by a trapped-control space charge limited current behavior. The ZnO/PCMO/ITO/glass structure shows a potential of the transparent memory for future invisible electronics devices.

yearjournalcountryeditionlanguage
2014-12-01Journal of Non-Crystalline Solids
https://doi.org/10.1016/j.jnoncrysol.2014.09.055