6533b831fe1ef96bd129858b

RESEARCH PRODUCT

Characterisation of radiation damage in silicon photomultipliers with a Monte Carlo model

Patrick AchenbachJ. PochodzallaS. Sánchez Majos

subject

PhysicsNuclear and High Energy PhysicsLuminosity (scattering theory)business.industryPhysics::Instrumentation and DetectorsDetectorMonte Carlo methodFOS: Physical sciencesRadiationOpticsSilicon photomultiplierRadiation damageIrradiationNuclear Experiment (nucl-ex)businessNuclear ExperimentInstrumentationMicrotronNuclear Experiment

description

Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived. The devices were irradiated with 14 MeV electrons at the Mainz microtron MAMI. It is shown that the first noticeable damage consists of an increase in the rate of dark pulses and the loss of uniformity in the pixel gains. Higher radiation doses reduced also the photon detection efficiency. The results are especially relevant for applications of SiPM in fibre detectors at high luminosity experiments.

yearjournalcountryeditionlanguage
2008-05-27
10.1016/j.nima.2008.06.021http://arxiv.org/abs/0805.4158