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RESEARCH PRODUCT
Parametrical study of multilayer structures for CIGS solar cells
Antonino ParisiAlessandro BusaccaRosario MiceliAlfonso Carmelo CinoG. Ricco GalluzzoAlessandro TomasinoVincenzo La RoccaAndrea AndoGabriele AdamoGiovanni CiprianiSalvatore StivalaV. Di DioD. La CasciaRiccardo PerniceMassimo CarusoGiovanni PalmisanoLuciano Curciosubject
Materials scienceOrganic solar cellbusiness.industryBand gapSolar cellSettore ING-INF/02 - Campi ElettromagneticiHybrid solar cellCIGSQuantum dot solar cellSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciCopper indium gallium selenide solar cellsSettore ING-INF/01 - ElettronicaPolymer solar celllaw.inventionthin-filmlawSolar cellElectronic engineeringOptoelectronicsPlasmonic solar cellSettore CHIM/07 - Fondamenti Chimici Delle Tecnologiesingle-step electrodeposition.businessdescription
In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill factor strongly depend on the energy gap. Instead, the absorber thickness plays a role up to a few microns, after which the cell parameters remain almost constant. As expected, the theoretical peak efficiency was found for a band gap value of 1.40 eV, corresponding to a Ga/(In+Ga) ratio of 0.66.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-10-01 |