Search results for "thin-film"

showing 10 items of 66 documents

Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

010302 applied physicsMaterials science[PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th]Schottky barriercu(InDopingMetals and Alloys02 engineering and technologySurfaces and InterfacesInterface[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]021001 nanoscience & nanotechnology01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCrystallographyGa)Se 2MoSe2/Mo(110)Lattice (order)0103 physical sciencesMaterials ChemistryThin film solar cellThin-film solar cell0210 nano-technologySchottky barrier
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Effect of graphene substrate type on formation of Bi2Se3 nanoplates

2019

AbstractKnowledge of nucleation and further growth of Bi2Se3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi2Se3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as refer…

0301 basic medicineNanostructureMaterials scienceNucleationlcsh:MedicineSubstrate (electronics)Chemical vapor depositionTOPOLOGICAL INSULATORGRAIN-BOUNDARIESArticlelaw.invention03 medical and health scienceschemistry.chemical_compoundTHIN-FILMS0302 clinical medicinelawSilicon carbide[CHIM]Chemical SciencesPyrolytic carbonThin filmlcsh:ScienceMultidisciplinaryGraphenelcsh:R030104 developmental biologySINGLEchemistryChemical engineeringGROWTHlcsh:Q030217 neurology & neurosurgeryScientific Reports
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A procedure to calculate the I–V characteristics of thin-film photovoltaic modules using an explicit rational form

2015

Abstract Accurate models of the electrical behaviour of photovoltaic modules are effective tools for system design. One or two diode equivalent circuits have been widely used even though some mathematical difficulties were found dealing with implicit equations. In this paper, a new model based on a simple rational function, which does not contain any implicit exponential form, is presented. The model was conceived in order to be used with thin-film photovoltaic modules, whose current–voltage curves are characterised by very smooth shapes. The parameters of the model are evaluated by means of the derivatives of the issued characteristics in the short circuit and open circuit points at standa…

Amorphous siliconEngineeringSettore ING-IND/11 - Fisica Tecnica AmbientaleMaximum power principlebusiness.industryMechanical EngineeringPhotovoltaic systemThin-film photovoltaic modules five-parameter modelfI–V characteristics solar energyBuilding and ConstructionRational functionManagement Monitoring Policy and LawTopologySolar irradiancechemistry.chemical_compoundGeneral EnergychemistryElectronic engineeringEquivalent circuitSystems designbusinessShort circuit
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An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules

2020

Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…

Amorphous siliconMaterials scienceSettore ING-IND/11 - Fisica Tecnica Ambientale060102 archaeologyMaximum power principleRenewable Energy Sustainability and the Environment020209 energyPhotovoltaic systemMechanical engineering06 humanities and the arts02 engineering and technologySolar irradianceCopper indium gallium selenide solar cellsPower (physics)Monocrystalline siliconThin-film photovoltaic modules One-diode model Five-parameter model I-V characteristics Solar energychemistry.chemical_compoundchemistry0202 electrical engineering electronic engineering information engineering0601 history and archaeologyDiode
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Preparation, Characterization, and Photoactivity of Polycrystalline Nanostructured TiO2 Catalysts.

2004

Various preparations of nanostructured TiO2 starting from Ti(iso-OC3H7)4 or TiCl4 are reported. The samples were characterized by X-ray diffractometry, specific surface area and porosity determinations, scanning and transmission electron microscopy, and diffuse reflectance spectroscopy. 4-Nitrophenol photodegradation in aqueous medium was employed as a probe reaction to test the photoactivity of the catalysts. The photoactivity of some samples derived from Ti(iso-OC3H7)4 was found comparable with that of commercial powders. Calcination after the hydrolysis process was necessary to achieve crystallization of the particles before using them as photocatalysts for the reaction studied. The samp…

AnataseMaterials scienceDiffuse reflectance infrared fourier transformInorganic chemistrySURFACE-AREAlaw.inventionCatalysislawSpecific surface areaANATASEMaterials ChemistryTRANSITION-METAL IONSHETEROGENEOUS PHOTOCATALYSISTHIN-FILMNANOPARTICLESCalcinationPhysical and Theoretical ChemistryCrystallizationPhotodegradationTITANIA POWDERSSIZED TIO2ChemistryPHOTOCATALYTIC ACTIVITYTITANIUM(IV) OXIDE PARTICLESGeneral MedicineSurfaces Coatings and FilmsCharacterization (materials science)Chemical engineeringCrystalliteChemInform
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Tailored conjugated polymer Langmuir-Schafer thin films in sensing transistors

2004

Organic Thin Film Transistors (OTFTs) have been fabricated, in a standard bottom gate configuration, with Langmuir-Schäfer (LS) or cast thin films of regioregular poly[1,4-(2,5-dioctyloxyphenylene)-2,5-thiophene], synthesized via an organometallic protocol, as active layers. The transistors electrical characterization has evidenced that LS based devices exhibit better performance level than cast film ones. Appealing perspectives for newly substituted conjugated polymers in OTFT sensing devices are discussed.

Conductive polymerchemistry.chemical_classificationLangmuirMaterials sciencebusiness.industryTransistorElectrical engineeringPolymerConjugated systemConjugated polymers Aromatic compounds cyclic voltammetryActive layerlaw.inventionchemistrylawThin-film transistorOptoelectronicsThin filmbusinessSPIE Proceedings
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Radio frequency shielding of thin aluminized plastic filters investigated for the ATHENA X-IFU detector

2018

Copyright 2018 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. The X-ray Integral Field Unit (X-IFU) is one of the two detectors of the ATHENA astrophysics space mission approved by ESA in the Cosmic Vision 2015-2025 Science Programme. The X-IFU consists of a large array of transition edge sensors (TES) micro-calorimeters covering a field of view of 5' diameter, sensitive in the energy range 0.2-12 keV, and providing a spectral resolution…

CryostatMaterials sciencePhysics::Instrumentation and DetectorsX-ray detectorRF attenuationField of viewCondensed Matter Physic02 engineering and technologyreverberation chamber7. Clean energyElectromagnetic interferenceSettore FIS/05 - Astronomia E AstrofisicaOpticsX-ray Integral Field Unit (X-IFU)thermal thin-film filter0202 electrical engineering electronic engineering information engineeringElectrical and Electronic Engineeringbusiness.industryElectronic Optical and Magnetic Material020502 materialsDetectorAstrophysics::Instrumentation and Methods for Astrophysicsx-ray detectorComputer Science Applications1707 Computer Vision and Pattern Recognition020206 networking & telecommunicationsresonance modeApplied MathematicATHENA X-ray observatoryEMI shielding0205 materials engineeringElectromagnetic shieldingRadio frequencyAntenna (radio)businessSpace Telescopes and Instrumentation 2018: Ultraviolet to Gamma Ray
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CIGS THIN FILM BY ONE-STEP ELECTRODEPOSITION FOR SOLAR CELLS

2013

In this work, we present a cost-effective technique to produce CIGS thin films for solar cells by means of a single-step electrodeposition. In fact, electrodeposition is known as an easy technique for building low cost materials for photovoltaic device processing. Morphological, structural and optical characterization of these films has been performed.

Cu(InGa)Se2(CIGS)Settore ING-IND/23 - Chimica Fisica ApplicataOne-step electrodepositionCIGS solar cellThin-film solar cellSettore ING-INF/01 - Elettronica
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A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime

2017

Abstract We present a compact model for the DC and small signal AC analysis of Organic Thin Film Transistors (OTFTs). The DC part of the model assumes that the electrical current injected in the OTFT is limited by the presence of a metal/organic semiconductor junction that, at source, acts as a reverse biased Schottky junction. By including this junction, modeled as a reverse biased gated diode at source, the DC model is able to reproduce the scaling of the electrical characteristics even for short channel devices. The small signal AC part of the model uses a transmission line approach in order to compute the impedances of the channel and parasitic regions of the device. The overlap capacit…

DC modelMaterials scienceContact effectsparasitic capacitanceSchottky barrierOrganic thin film transistors02 engineering and technologyHybrid-pi model01 natural sciencesSignalNon-quasi static small signal modelBiomaterialsOrganic thin film transistors; DC model; AC model; Contact effects; parasitic capacitance; Non-quasi static small signal modelParasitic capacitanceTransmission line0103 physical sciencesHardware_INTEGRATEDCIRCUITSMaterials ChemistryAC modelElectrical and Electronic EngineeringElectrical impedance010302 applied physicsbusiness.industryGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsOrganic semiconductorThin-film transistorOptoelectronics0210 nano-technologybusinessOrganic Electronics
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A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

2020

For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…

DECOMPOSITIONMaterials scienceSubstrate (electronics)Chemical vapor depositionEPITAXYEpitaxyPyrophoricitychemistry.chemical_compoundAtomic layer depositionTHIN-FILMSDeposition (phase transition)alumiiniThin filmTEMPERATUREplasma processingAL2O3Surfaces and InterfacesatomikerroskasvatusCondensed Matter PhysicsSurfaces Coatings and FilmsChemistryCHEMICAL-VAPOR-DEPOSITIONPhysics and AstronomySINGLEchemistryChemical engineeringALDatomic layer depositionAlkoxideGROWTHohutkalvotJournal of Vacuum Science & Technology A
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