6533b833fe1ef96bd129c1bb
RESEARCH PRODUCT
ELECTRON-PHONON COUPLING IN HEAVILY DOPED SILICON
Antti ManninenMika PrunnilaJouni AhopeltoP. KivinenAlexander SavinJukka P. Pekolasubject
Materials scienceSiliconchemistrybusiness.industryTheoryofComputation_ANALYSISOFALGORITHMSANDPROBLEMCOMPLEXITYDopingHardware_INTEGRATEDCIRCUITSchemistry.chemical_elementOptoelectronicsRefrigerationElectron phonon couplingbusinessdescription
The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-04-01 | Physics, Chemistry and Application of Nanostructures |