6533b834fe1ef96bd129d423
RESEARCH PRODUCT
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
Enrique MasetJ. Bta. EjeaPedro J. MartinezAgustin FerreresJose JordanEsteban Sanchis-kildersVicente Estevesubject
Materials scienceThermal breakdownGallium nitrideFailure mechanism02 engineering and technologyHigh-electron-mobility transistor01 natural sciencesFault detection and isolationlaw.inventionchemistry.chemical_compoundlaw0103 physical sciencesMaterials ChemistryElectrical and Electronic Engineering010302 applied physicsbusiness.industryTransistorNormally off021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialschemistryOptoelectronics0210 nano-technologybusinessShort circuitdescription
The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-03-09 | Semiconductor Science and Technology |