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RESEARCH PRODUCT
Effect of air on oxygen p-doped graphene on SiO2
Aurora PiazzaFilippo GiannazzoGianpiero BuscarinoGabriele FisichellaAntonino La MagnaFabrizio RoccaforteMarco CannasFranco Mario GelardiSimonpietro Agnellosubject
inorganic chemicalsMaterials Chemistry2506 Metals and AlloyElectronic Optical and Magnetic MaterialSettore FIS/01 - Fisica Sperimentaletechnology industry and agricultureSurfaces Coatings and FilmCondensed Matter Physicgraphene dopingCondensed Matter::Materials ScienceCondensed Matter::Strongly Correlated ElectronsSiAFMSiO2Electrical and Electronic Engineeringhuman activitiesRamanSurfaces and Interfacedescription
Stability in ambient air or in vacuum-controlled atmosphere of molecular oxygen-induced p-type doping of graphene monolayer on SiO2 substrate on Si is investigated by micro-Raman spectroscopy and atomic force microscopy (AFM). The Raman 2D and G bands spectral positions and amplitude ratio are affected by the permanence in air atmosphere in a time scale of months whereas the vacuum safely maintains the doping effects determined through Raman bands. No morphological effects are induced by the doping and post-doping treatments. A reactivity of ambient molecular gas with stably trapped oxygen is suggested to induce the doping modification. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-01-01 |