6533b835fe1ef96bd129f32d
RESEARCH PRODUCT
High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
Jesus GonzalezJesus GonzalezS. GillilandJean-marc BrotoMarius MillotAlfredo SeguraJean LeotinA. Chevysubject
PhotoluminescenceCondensed matter physicsChemistryBand gapExcitonDielectricLandau quantizationCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsMagnetic fieldCondensed Matter::Materials ScienceEffective mass (solid-state physics)Diamagnetismdescription
We report here first magneto-photoluminescence investigations under high pressure up to 6 GPa on III-VI layered semiconductor InSe. Both diamagnetism and magnetic field induced gap opening driven by Landau quantization became observable by using a 60 T pulsed magnet. The pressure-induced enhancement of the diamagnetic coefficient is consistent with the increase of the dielectric constant under pressure while the evolution of the linear coefficient is consistent with a slight increase of the electron effective mass up to 4 GPa and a direct-to-indirect conduction-band crossover around that pressure.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-03-01 | physica status solidi (b) |