6533b836fe1ef96bd12a07ab
RESEARCH PRODUCT
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
P. H. JeffersonJesús Zúñiga-pérezTim D. VealChristopher F McconvilleVicente Muñoz-sanjoséPhil D. C. Kingsubject
Materials scienceDopantCondensed matter physicsbusiness.industryElectronic structureCondensed Matter PhysicsEpitaxyElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceSemiconductorElectrical resistivity and conductivityImpurityAtomic physicsbusinessElectronic band structureSurface statesdescription
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in $n$-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-01-15 | Physical Review B |