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RESEARCH PRODUCT
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
Benito AlénBenito AlénDaniel GranadosLuisa GonzálezJorge M. GarciaJuan P. Martínez-pastorJose Boschsubject
III-V semiconductorsOscillator strengthRadiative lifetimesTime resolved spectraTunnellingSelf assembledCondensed Matter::Materials ScienceGallium arsenideIndium compoundsElectric fieldQuantum mechanicsSemiconductor quantum dotsNetwork of excellenceEuropean commissionPhotoluminescenceQuantum tunnellingPhysicsSelf-assemblyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsQuantum dotEffective massElectron hole recombinationElectron-hole recombinationdescription
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-01-10 | Physical Review B |