6533b839fe1ef96bd12a65df

RESEARCH PRODUCT

Antiferromagnetic Topological Insulator with Nonsymmorphic Protection in Two Dimensions

Yuriy MokrousovYuriy MokrousovYing DaiBaibiao HuangChengwang NiuNing MaoH. H. Wang

subject

PhysicsSpintronicsCondensed matter physicsBand gapGeneral Physics and AstronomyCharge (physics)01 natural sciencesSymmetry (physics)Gapless playbackTopological insulator0103 physical sciencesAntiferromagnetismddc:530Condensed Matter::Strongly Correlated Electrons010306 general physicsSpin-½

description

The recent demonstration of topological states in antiferromagnets (AFMs) provides an exciting platform for exploring prominent physical phenomena and applications of antiferromagnetic spintronics. A famous example is the AFM topological insulator (TI) state, which, however, was still not observed in two dimensions. Using a tight-binding model and first-principles calculations, we show that, in contrast to previously observed AFM topological insulators in three dimensions, an AFM TI can emerge in two dimensions as a result of a nonsymmorphic symmetry that combines the twofold rotation symmetry and half-lattice translation. Based on the spin Chern number, Wannier charge centers, and gapless edge states analysis, we identify intrinsic AFM $X\mathrm{Mn}Y$ ($X=\mathrm{Sr}$ and Ba, $Y=\mathrm{Sn}$ and Pb) quintuple layers as experimentally feasible examples of predicted topological states with a stable crystal structure and giant magnitude of the nontrivial band gaps, reaching as much as 186 meV for SrMnPb, thereby promoting these systems as promising candidates for innovative spintronics applications.

https://doi.org/10.1103/physrevlett.124.066401