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RESEARCH PRODUCT
Investigation of Silicon Carbide Polytypes by Raman Spectroscopy
A. PlaudeN. Mironova-ulmaneO. SergeevG. Chikvaidzesubject
DiffractionScanning electron microscopePhysicsQC1-999General EngineeringStackingAnalytical chemistryGeneral Physics and AstronomySem analysisChemical vapor depositionCrystal structurex-ray diffraction (xrd)silicon carbide (sic)symbols.namesakechemistry.chemical_compoundraman spectroscopychemistrysymbolsSilicon carbidepolytypesRaman spectroscopydescription
Abstract Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-06-01 | Latvian Journal of Physics and Technical Sciences |