A comprehensive study of structure and properties of nanocrystalline zinc peroxide

2022

Abstract Nanocrystalline zinc peroxide (nano-ZnO2) was synthesized through a hydrothermal process and comprehensively studied using several experimental techniques. Its crystal structure was characterized by X-ray diffraction, and the average crystallite size of 22 nm was estimated by Rietveld refinement. The temperature-dependent local environment around zinc atoms was reconstructed using reverse Monte Carlo (RMC) analysis from the Zn K-edge X-ray absorption spectra. The indirect band gap of about 4.6 eV was found using optical absorption spectroscopy. Lattice dynamics of nano-ZnO2 was studied by infrared and Raman spectroscopy. In situ Raman measurements indicate the stability of nano-ZnO…

Some aspects of the solid state physics of yellow arsenic

1996

Optical absorption and Raman studies of neutron-irradiated Gd3Ga5O12 single crystals

2018

Abstract In this work we have performed a comparative analysis of optical absorption and micro-Raman spectra for series of Gd3Ga5O12 (GGG) single crystals irradiated by fast neutrons with fluences from 1016 n/cm2 to 1018 n/cm2. It was found that the optical absorption spectra of non-irradiated Czochralski grown GGG consist of the relatively narrow lines in the UV spectral range related to the 4f–4f transitions in Gd3+. Transitions from the 6S7/2 ground state to the 6P, 6J and 6D states in a Gd3+ cation are clearly detected. For a GGG crystal containing Ca impurity ions, additional absorption band at 350 nm is observed, and it is tentatively ascribed to oxygen vacancies associated with Ca im…

ChemInform Abstract: Some Aspects of the Solid State Physics of Yellow Arsenic

2010

Luminescence of rutile structured crystalline silicon dioxide (stishovite)

2014

Abstract Luminescence spectrum of synthetic mono-crystalline stishovite comprises a slow blue band at ~400 nm (~3.1 eV) and a fast UV band at ~260 nm (~4.7 eV), as well as some bands in near-infrared range of spectra. The NIR luminescence of stishovite crystal, excited with lasers 532 nm, 248 nm and 193 nm as well as x-ray, possesses several sharp lines. A zero phonon line is situated at 787 nm (1.57 eV) and grows with cooling. An anti-Stokes line is located at 771 nm (1.68 eV). This line disappears with cooling. In a powder sample of stishovite created by shock waves generated by the impact of a 50-m-diameter meteorite in Arizona 50,000 years ago, the PL broad blue band is situated at 425 …

Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)

2011

Abstract It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F 2 , 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ =1.2±0.1 ns for the range of temperatures 16–150 K. The blue band decay possesses fast and slow components. The fast component of the blue band deca…

Luminescence of coesite

2015

Coesite is a polymorph modification of crystalline silicon dioxide with a tetrahedral structure. The luminescence of a single crystal of synthetic coesite was studied under excitation using x-rays, an electron beam, and excimer lasers KrF (248 nm), ArF (193 nm) and F2 (157 nm). Luminescence bands in the regions of 2.5 eV and 4.4 eV appear. The blue band is dependent on temperature and is composed of decay kinetics. Three main decay times are revealed, exhibiting luminescence of a different nature in the same range of the spectrum. One is in the ns range of time with a time constant of about 2 ns. The two other decay times are in the regions of 5 μs and 700 μs. The 5 μs component is also see…

Comparative study of the luminescence properties of macro- and nanocrystalline MgO using synchrotron radiation

2013

MgO nano-powder with an average crystallite size of nanoparticles ranging 10-15 nm was synthesized using the extractive-pyrolytic method and was studied by room temperature VUV spectroscopy under synchrotron radiation excitation. Comparative analysis of their luminescent properties with that of mac- rocrystalline powder analogues and an MgO single crystal, grown by the arc-fusion method, has been per- formed under excitation by pulsed VUV synchrotron radiation. Special attention was paid to VUV spectral range, which is not reachable with commonly used lamp and laser sources. A considerable blue shift of about 0.3 eV in the excitation spectra of 2.95 eV emission band, was revealed in nanocry…

Application of micro Raman spectroscopy to industrial FC membranes

2007

Raman spectra of as-received and protonated membranes (Nafion® NRE-212, Fumapem® F-14100 and Fumasep® FAA) were measured with He-Cd and Ar laser. For the first time the Raman and IR spectra are reported of Fumasep membranes. Most of peaks in vibration spectra active in Raman and IR of membranes are interpreted with C-F, C-S, C-O-C, SO3, C-C bonds. The vibration region connected with protons and H-O bond in both types of membranes is found in Raman and IR spectra.

Spectroscopic studies of molecular arsenic

1995

Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

2014

Abstract Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure

Luminescence of phosphorus containing oxide materials: Crystalline SiO2‐P and 3P2O5⋅7SiO2; CaO⋅P2O5; SrO⋅P2O5 glasses

2014

Luminescence of phosphate glasses such as CaO⋅P2O5 and SrO⋅P2O5 is compared with that of phosphorus doped crystalline α-quartz and phosphosilicate glass with content 3P2O5⋅7SiO2. Water & OH groups are found by IR spectra in these materials. The spectrum of luminescence contains many bands in the range 1.5 - 5.5 eV. The luminescence bands in UV range at 4.5-5 eV are similar in those materials. Decay duration in exponential approximation manifests a time constant about 37 ns. Also a component in μs range was detected. PL band of μs component is shifted to low energy with respect to that of ∼37 ns component. This shift is about 0.6 eV. It is explained as singlet-triplet splitting of excited st…

Time-resolved FDTD and experimental FTIR study of gold micropatch arrays for wavelength-selective mid-infrared optical coupling

2021

The work was partially supported by Sweden's innovation agency Vinnova (Large area CVD graphene-based sensors/IR-photodetectors 2020-00797) and EU CAMART2 project (European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No.739508). TY acknowledges European Regional Development Fund Project No. 1.1.1.2/VIAA/4/20/740.

Optical properties of natural topaz

2013

The results of investigation of infrared, Raman and UV-Visible absorption spectra of natural topaz crystals from Ukraine before and after fast neutron irradiation are presented. We assume that the ~ 620 nm band in topaz crystals is associated with the presence of Cr 3+ , Fe 2+ and Mn 2+ impurities. The broad band with maxima at 650 cm -1 observed in Raman spectra for topaz irradiated by fast neutrons may be connected with lattice disorder. Exchange interaction between radiation defect and impurity ions during neutron irradiation leads to appearance of additional absorption band in UV-VIS spectra and bands broadening in infrared and Raman spectra of investigated crystals.

Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures

2020

Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the substrate holder temp…

UV and yellow luminescence in phosphorus doped crystalline and glassy silicon dioxide

2015

Abstract Luminescence of phosphorus doped crystalline α-quartz and phosphosilicate glass with content 3P2O5·7SiO2 was studied. Water and OH groups are found by IR spectra in these materials. The spectrum of luminescence contains many bands in the range 1.5–5.5 eV. The luminescence bands in UV range at 4.5–5 eV are similar in those materials. Decay duration in exponential approximation manifests a time constant about 37 ns. Also a component in µs range was detected. PL band of µs component is shifted to low energy with respect to that of ~37 ns component. This shift is about 0.6 eV. It is explained as singlet–triplet splitting of excited state. Below 14 K increase of luminescence kinetics du…

Extractive-Pyrolytic Method for Au/MeO<sub>x</sub> Nanocomposites Production

2014

Au/MeOx(MeOx- SiO2, Al2O3and TiO2) nanocomposites have been produced by the extractive-pyrolytic method. An organic extract – a solution of n-trioctylammonium tetrachlorolaurate ([Oct3NH]AuCl4) in toluene – was used as a gold-containing precursor. The produced samples were analyzed by IR spectroscopy, X-ray diffraction and scanning electron microscopy. The performed studies have shown that the mean size of the metal crystallites vary within wide limits: on Al2O3from 60 nm to 35 nm; on SiO2from 33 nm to 23 nm; on TiO2from 50 nm to 13 nm.