6533b852fe1ef96bd12ab77f
RESEARCH PRODUCT
Dislocation mobility study of heavy ion induced track damage in LiF crystals
I. ManikaMarcel ToulemondeK. SchwartzJanis Manikssubject
Nuclear and High Energy PhysicsMaterials science[PHYS.HEXP] Physics [physics]/High Energy Physics - Experiment [hep-ex]LiFmacromolecular substances02 engineering and technology01 natural sciencesIon tracksIonlaw.inventionPACS: 61.80.Jh; 65.72.FfCondensed Matter::Materials ScienceOptical microscopelawEtching (microfabrication)0103 physical sciences[PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex]Specific energyInstrumentation010302 applied physicsTrack etchingIon trackTrack (disk drive)fungitechnology industry and agricultureDislocation mobility021001 nanoscience & nanotechnology[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Core (optical fiber)[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Atomic physicsDislocation0210 nano-technologydescription
Track damage created in LiF crystals by swift U, Kr, Xe and Ni ions with a specific energy of 11.1 MeV/u was studied using dislocation mobility measurements, track etching, SEM, AFM and optical microscopy. The results demonstrate continuity of etching of U tracks while discontinuities of etching are observed in the case of Xe ions. The relationship between the track structure and dislocation mobility in irradiated crystals is discussed. The dislocation mobility technique can serve as a highly sensitive method for track core damage studies.
year | journal | country | edition | language |
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2008-06-01 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |