6533b853fe1ef96bd12ac095

RESEARCH PRODUCT

(Ga,In)P nanowires grown without intentional catalyst

Bartolomeu C. VianaBartolomeu C. VianaCarolina F. CerqueiraNestor Perea-lopezCleanio Luz-limaMauricio TerronesM. SacilottiM. SacilottiAndré Luiz PintoAnderson S. L. GomesEduardo H.l. FalcãoRémi ChassagnonLuiz C. Sampaio

subject

Materials scienceVapor pressureNanowireAnalytical chemistryNanotechnologyCondensed Matter PhysicsCatalysisInorganic Chemistrychemistry.chemical_compoundchemistryMaterials ChemistryLight emissionMetalorganic vapour phase epitaxyVapor–liquid–solid methodTriethylgalliumQuantum tunnelling

description

Abstract We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ( ( C 2 H 5 ) 3 Ga ) , used as Ga source, is transported by the N 2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga 1 − x In x P / Ga 1 − y In y P interfaces ( x ≠ y ) is proposed to explain this efficient light emission mechanism.

https://doi.org/10.1016/j.jcrysgro.2015.08.009