6533b853fe1ef96bd12ac184
RESEARCH PRODUCT
Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts
Mathias KläuiMathias KläuiMathias KläuiRegina Hoffmann-vogelAjit K. PatraJan RhensiusJan RhensiusJan RhensiusLaura J. HeydermanLaura J. HeydermanStephen KrzykArndt Von BierenArndt Von BierenRobert M. Reevesubject
PermalloyMaterials scienceCondensed Matter - Mesoscale and Nanoscale PhysicsMagnetic domainCondensed matter physicsMagnetoresistanceField (physics)530 PhysicsFOS: Physical sciencesGeneral Physics and Astronomy02 engineering and technology530 Physik021001 nanoscience & nanotechnology01 natural sciencesElectromigrationCross section (physics)Domain wall (magnetism)Ballistic conductionMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciences010306 general physics0210 nano-technologydescription
We determine magnetoresistance effects in stable and clean Permalloy nanocontacts of variable cross section, fabricated by UHV deposition and in situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect. DOI: 10.1103/PhysRevLett.110.067203
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-02-07 | Physical Review Letters 110, 067203 |