Domain wall pinning in ultra-narrow electromigrated break junctions
The study of magnetic domain walls in constrained geometries is an important topic, yet when dealing with extreme nanoscale magnetic systems artefacts can often dominate the measurements and obscure the effects of intrinsic magnetic origin. In this work we study the evolution of domain wall depinning in electromigrated ferromagnetic junctions which are both initially fabricated and subsequently tailored in-situ in clean ultra-high vacuum conditions. Carefully designed Ni(80)Fe(20) (Permalloy) notched half-ring structures are fabricated and investigated as a function of constriction width by tailoring the size of the contact using controlled in-situ electromigration. It is found that the dom…
Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts
We determine magnetoresistance effects in stable and clean Permalloy nanocontacts of variable cross section, fabricated by UHV deposition and in situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect. DOI: 10.1103/PhysRevLett.110.067203