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RESEARCH PRODUCT
Growth, structural and optical properties of AlGaN nanowires in the whole composition range.
Ana CrosCatherine BougerolHubert RenevierBruno GayralS Murcia-mascarosAurélie PierretBruno Daudinsubject
Materials scienceScanning electron microscopeNanowireNucleationBioengineering02 engineering and technologySubstrate (electronics)Epitaxy01 natural sciencessymbols.namesake0103 physical sciencesMicroscopyGeneral Materials ScienceElectrical and Electronic Engineering010302 applied physicsMechanical EngineeringGeneral Chemistry021001 nanoscience & nanotechnologyCrystallographyMechanics of MaterialsChemical physicssymbols[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]0210 nano-technologyRaman spectroscopyMolecular beam epitaxydescription
International audience; We report on the growth of AlxGa1-xN nanowires by plasma-assisted molecular beam epitaxy for x in the 0.3-0.8 range. Based on a combination of macro- and micro-photoluminescence, Raman spectroscopy, x-ray diffraction and scanning electron microscopy experiments, it is shown that the structural and optical properties of AlGaN NWs are governed by the presence of compositional fluctuations associated with strongly localized electronic states. A growth model is proposed, which suggests that, depending on growth temperature and metal adatom density, macroscopic composition fluctuations are mostly of kinetic origin and are directly related to the nucleation of the AlGaN nanowire section on top of the GaN nanowire base which is used as a substrate.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-03-22 | Nanotechnology |