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RESEARCH PRODUCT
The "Livio Scarsi" X-Ray Facility at University of Palermo for Device Testing
M. QuartararoGaetano GerardiGiuseppe RasoA.a. TurturiciLeonardo AbbeneFabio PrincipatoFrancesco Pintacudasubject
EngineeringPhotonbusiness.industrySettore FIS/01 - Fisica SperimentaleX-rayGamma raySemiconductor deviceFluenceSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Semiconductor detectorX-ray facility semiconductor detectors digital pulse processing rad-hard MOSFETs total ionizing testsOpticsAbsorbed doseIrradiationbusinessTelecommunicationsdescription
In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also available. Total ionizing dose (TID) tests on rad-hard power MOSFET transistors by using both X rays and 60Co gamma rays are presented. The aim of this work is to open up to potential users for low energy X-ray applications.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-09-01 | 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) |