0000000000056675
AUTHOR
A.a. Turturici
showing 12 related works from this author
Polarization phenomena in Al/p-CdTe/Pt X-ray detectors
2013
Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium, aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by …
Electrical Characterization of CdTe pixel detectors with Al Schottky anode
2014
Abstract Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage ( I–V ) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe con…
Time-dependent electric field in Al/CdTe/Pt detectors
2015
Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from bias-induced time instability (polarization). Polarization phenomena cause a progressive time-degradation of the spectroscopic performance of the detectors, due to hole trapping and detrapping from deep acceptor levels that directly control the electric field distribution. In this work we present experimental investigations on the electric field profile of planar Al/CdTe/Pt detectors by means of Pockels effect measurements. The time/temperature dependence of the electric field was investigated in a long time window (up to 10 h) and the correlation with the reverse c…
Characterization of Al-Schottky CdTe detectors
2011
In the last decades, great efforts are being devoted to the development of CdTe detectors for high resolution X-ray and gamma ray spectroscopy. Recently, new rectifying contacts based on aluminum (Al) are very appealing in the development of CdTe detectors with low leakage currents and anode pixellization. In this work, we report on preliminary results of electrical and spectroscopic investigations on Schottky CdTe diode detectors (4.1 × 4.1 × 0.75 and 4.1 × 4.1 × 2 mm3) with Au/Ti/Al/CdTe/Pt electrode configuration. The detectors are characterized by very low leakage currents even at room temperature (26 pA at 25 °C under a bias voltage of −100 V for the 2 mm thick detector). Polarization …
Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique
2016
Abstract In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage ( I – V ) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room tempera…
Charge carrier transport mechanisms in CdZnTe detectors grown by the vertical Bridgman technique
2016
In this work, we report on the results of electrical characterization of CdZnTe (CZT) detectors, with gold electroless contacts, grown by the boron oxide encapsulated vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), have the same electrode layout: the anode is a central electrode (2 x 2 mm(2)) surrounded by a guard ring electrode. The cathode is a planar electrode covering the detector surface (4.1 x 4.1 mm(2)). Current-voltage (I-V) characteristics were measured at different temperatures in order to study the charge transport and the electrical properties. These detectors were compared with the trav…
Spectroscopic response and charge transport properties of CdZnTe detectors grown by the vertical Bridgman technique
2015
In this work, we present the results of spectroscopic investigations on CdZnTe (CZT) detectors grown by the boron oxide encapsulated vertical Bridgman technique (1MEM-CNR, Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), are characterized by the same electrode layout (gold electroless contacts): the anode is a central electrode (2 x 2 mm(2)) surrounded by a guard-ring electrode, while the cathode is a planar electrode covering the detector surface (4.1 x 4.1 mm(2)). The results of electrical investigations point out the low leakage currents of these detectors even at high bias voltages: 38 nA/cm(2) (T = 25 degrees C) at 10000 V/cm. The time stability and the spectros…
The "Livio Scarsi" X-Ray Facility at University of Palermo for Device Testing
2015
In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also avail…
X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects
2016
Abstract Nowadays, CdZnTe (CZT) is one of the key materials for the development of room temperature X-ray and gamma ray detectors and great efforts have been made on both the device and the crystal growth technologies. In this work, we present the results of spectroscopic investigations on new boron oxide encapsulated vertical Bridgman (B-VB) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Several detectors, with the same electrode layout (gold electroless contacts) and different thicknesses (1 and 2.5 mm), were realized: the cathode is a planar electrode covering the detector surface (4.1×4.1 mm2), while the anode is a central electrode (2×2 mm2) surrounded by a guard-rin…
Electric field manipulation in Al/CdTe/Pt detectors under optical perturbations
2017
Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from polarization phenomena, which cause a progressive time degradation of the spectroscopic performance. In this work we investigated on the time dependence of the electric field of an Al/CdTe/Pt detector under optical perturbation by means of Pockels effect measurements. A tunable laser with wavelengths ranging within 700−1000 nm and a 940 nm light emitting diode (LED) were used. The measurements of both the electric field profile and the total current were used to better understand the effects of the optical perturbation on polarization phenomena. The results point ou…
Time-dependent current-voltage characteristics of Al/p-CdTe/Pt x-ray detectors
2012
Current-voltage (I-V) characteristics of Schottky Al/p-CdTe/Pt detectors were investigated in dark and at different temperatures. CdTe detectors with Al rectifying contacts, very appealing for high resolution x-ray and gamma ray spectroscopy, suffer from bias-induced polarization phenomena which cause current increasing with the time and severe worsening of the spectroscopic performance. In this work, we studied the time-dependence of the I-V characteristics of the detectors, both in reverse and forward bias, taking into account the polarization effects. The I-V measurements, performed at different time intervals between the application of the bias voltage and the measurement of the current…
Experimental results from Al/p-CdTe/Pt X-ray detectors
2013
Abstract Recently, Al/CdTe/Pt detectors have been proposed for the development of high resolution X-ray spectrometers. Due to the low leakage currents, these detectors allow high electric fields and the pixellization of anodes with the possibility to realize single charge carrier sensing detectors. In this work, we report on the results of electrical and spectroscopic investigations on CdTe diode detectors with Al/CdTe/Pt electrode configuration (4.1×4.1×0.75 and 4.1×4.1×2 mm 3 ). The detectors are characterized by very low leakage currents in the reverse bias operation: 0.3 nA at 25 °C and 2.4 pA at −25 °C under a bias voltage of −1000 V. The spectroscopic performance of the detectors at b…