6533b823fe1ef96bd127f752

RESEARCH PRODUCT

Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique

A.a. TurturiciG. BenassiManuele BettelliGiuseppe RasoAndrea ZappettiniLeonardo AbbeneGaetano GerardiNicola ZambelliFabio PrincipatoDavide Calestani

subject

Nuclear and High Energy PhysicsTraveling heater method electrical propertie02 engineering and technology01 natural sciencesBoron oxide encapsulated Vertical Bridgman techniqueTraveling heater methodElectrical resistivity and conductivity0103 physical sciencesInstrumentationDeposition (law)010302 applied physicsPhysicsInterfacial layer-thermionic-diffusionbusiness.industryCdZnTe detectorsCdZnTe detectorSettore FIS/01 - Fisica SperimentaleBiasing021001 nanoscience & nanotechnologySettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Electrical contactsAnodeBoron oxideelectrical propertiesElectrodeOptoelectronics0210 nano-technologybusinessVoltage

description

Abstract In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage ( I – V ) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room temperature: 34 nA/cm 2 ( T =25 °C) at 10,000 V/cm, making them very attractive for high flux X-ray measurements, where high bias voltage operation is required. The Au/CdZnTe barrier heights of the devices were estimated by using the interfacial layer-thermionic-diffusion (ITD) model in the reverse bias voltage range. Comparisons with CdZnTe detectors, grown by Traveling Heater Method (THM) and characterized by the same electrode layout, deposition technique and resistivity, were also performed.

https://doi.org/10.1016/j.nima.2016.05.124