0000000000084206
AUTHOR
Davide Calestani
Mechanically stable metal layers for ohmic and blocking contacts on CdZnTe detectors by electroless deposition
CdZnTe detectors are commonly exploited for the detection of gamma rays. However, obtaining mechanical stable, low noise contacts on CdZnTe is still an issue. In particular, ohmic contacts would be preferable for high flux applications. In this work, we show that it is possible to obtain mechanical stable gold contacts by electroless deposition in methanol solution. Moreover, we show that electroless deposited nickel contacts are also mechanical stable and are good candidates for the realization of ohmic contacts on high resistivity CdZnTe crystals.
Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique
Abstract In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage ( I – V ) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room tempera…
Optimization of quasi-hemispherical CdZnTe detectors by means of first principles simulation
AbstractIn this paper we present the development of quasi-hemispherical gamma-ray detectors based on CdZnTe. Among the possible single-polarity electrode configurations, such as coplanar, pixelated, or virtual Frisch-grid geometries, quasi-hemispherical detectors are the most cost-effective alternative with comparable raw energy resolution in the high and low energy range. The optimal configuration of the sensor in terms of dimension of the crystals and electrode specifications has been first determined by simulations, and successively validated with experimental measures. Spectra from different sources have been acquired to evaluate the detectors performances. Three types of detectors with…
Charge carrier transport mechanisms in CdZnTe detectors grown by the vertical Bridgman technique
In this work, we report on the results of electrical characterization of CdZnTe (CZT) detectors, with gold electroless contacts, grown by the boron oxide encapsulated vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), have the same electrode layout: the anode is a central electrode (2 x 2 mm(2)) surrounded by a guard ring electrode. The cathode is a planar electrode covering the detector surface (4.1 x 4.1 mm(2)). Current-voltage (I-V) characteristics were measured at different temperatures in order to study the charge transport and the electrical properties. These detectors were compared with the trav…