6533b855fe1ef96bd12b07e7

RESEARCH PRODUCT

Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

Romain LebrunRomain LebrunEiji SaitohFelix SchreiberLorenzo BaldratiC. SchmittMathias KläuiRafael Ramos

subject

MicroscopeMaterials sciencePhysics and Astronomy (miscellaneous)Magnetoresistance530 PhysicsFOS: Physical sciences02 engineering and technologyElectrical switching01 natural sciencesSignallaw.inventionMagneto opticallaw0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)AntiferromagnetismThin filmMagneto010302 applied physicsCondensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsNon-blocking I/O530 Physik021001 nanoscience & nanotechnologyCondensed Matter::Strongly Correlated Electrons0210 nano-technology

description

We demonstrate stable and reversible current induced switching of large-area ($> 100\;��m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.

yearjournalcountryeditionlanguage
2020-04-28
10.1063/5.0011852http://arxiv.org/abs/2004.13374