6533b855fe1ef96bd12b0a77
RESEARCH PRODUCT
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer
Fulvio CarusoMauro MoscaRoberto MacalusoClaudio CaliEric Feltinsubject
Materials scienceFabricationbusiness.industrychemistry.chemical_elementGallium nitrideHeterojunctionZincSettore ING-INF/01 - ElettronicaZinc oxide nanorods Nanofabrication Characterization p-GaN hydrothermal growth seed layerlaw.inventionchemistry.chemical_compoundNanolithographychemistrylawOptoelectronicsNanorodbusinessLayer (electronics)Light-emitting diodedescription
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-07-01 |