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RESEARCH PRODUCT
Ultra-Low Noise Multiwalled Carbon Nanotube Transistors
Markus AhlskogOlli HerranenD. TalukdarD. Talukdarsubject
NanotubeMaterials scienceta114Condensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryTransistorGate dielectricFOS: Physical sciencesSchottky diodeNanotechnologyGeneral ChemistryCondensed Matter::Mesoscopic Systems and Quantum Hall Effectlaw.inventionCondensed Matter::Materials SciencelawMesoscale and Nanoscale Physics (cond-mat.mes-hall)OptoelectronicsGeneral Materials ScienceFlicker noisebusinessNanoscopic scaleOrder of magnitudeNoise (radio)description
We report an experimental noise study of intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube (IS-MWCNT) devices. The noise is two orders of magnitude lower than in singlewalled nanotubes (SWCNTs) and has no length dependence within the studied range. In these channel limited devices with small or negligible Schottky barriers the noise is shown to originate from the intrinsic potential fluctuations of charge traps in the gate dielectric. The gate dependence of normalized noise can be explained better using ballistic the charge noise model rather than diffusive McWhorter’s model. The results indicate that the noise properties of IS-MWCNTs are closer to SWCNTs than thicker MWCNTs. These results can be utilized in future to analyze noise in other purely ballistic nanoscale devices.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-04-10 |