6533b855fe1ef96bd12b125a
RESEARCH PRODUCT
Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions
Laurent NevouNicolas GrandjeanSylvain NicolayMarc IlegemsMauro MoscaRaphaël ButtéMaria TchernychevaF. H. JulienEric FeltinJ.-f. Carlinsubject
Materials scienceAbsorption spectroscopyCondensed matter physicsbusiness.industryMULTIPLE-QUANTUM WELLSMU-MInfrared spectroscopychemistry.chemical_elementHeterojunctionSurfaces and InterfacesChemical vapor depositionNitrideCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryMaterials ChemistryABSORPTIONOptoelectronicsMetalorganic vapour phase epitaxyElectrical and Electronic EngineeringbusinessIndiumQuantum welldescription
Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice-matched to GaN and no cracks appear in the structure. At very low indium concentration (similar to 2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium-free structures. Different mechanisms of strain relaxation in pure and 2% indium-doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 urn for AlN/GaN MQWs, and 3 mu n for AlInN/GaN MQWs with 15% of In are achieved. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-04-01 |