6533b856fe1ef96bd12b2694

RESEARCH PRODUCT

Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors

Luca RazzariGiuseppe LulloRoberto MacalusoF. Di FrancoAndrea ZafforaMauro MoscaMonica SantamariaVincenzo AglieriU. Lo Cicero

subject

Titanium DioxideMaterials sciencebusiness.industryAnodizingMemristorAnodizingMemristorRRAMSettore ING-INF/01 - Elettronicalaw.inventionAnodechemistry.chemical_compoundSettore ING-IND/23 - Chimica Fisica ApplicatachemistrylawResistive switchingTitanium dioxideOptoelectronicsThin filmPhotolithographybusinessCrossbar arrayMultistate resistanceMicroscale chemistry

description

The paper presents the resistive switching of electroforming-free Ti/anodic- TiO 2 /Cu memristors. Anodic TiO 2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.

yearjournalcountryeditionlanguage
2018-09-01
10.1109/rtsi.2018.8548396http://hdl.handle.net/10447/337923