6533b856fe1ef96bd12b271b
RESEARCH PRODUCT
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
Hubert RenevierBruno DaudinAna CrosRafael MataKarine HestrofferJorge BudagoskyCatherine Bougerolsubject
010302 applied physicsMaterials scienceScanning electron microscopeNucleationNanowireAnalytical chemistry02 engineering and technologyPlasma021001 nanoscience & nanotechnologyCondensed Matter PhysicsCritical value01 natural sciencesSize increaseInorganic ChemistryCondensed Matter::Materials ScienceCrystallography0103 physical sciencesMaterials Chemistry[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]0210 nano-technologyDispersion (chemistry)ComputingMilieux_MISCELLANEOUSMolecular beam epitaxydescription
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a critical value.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-11-01 |