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RESEARCH PRODUCT
The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
Kai ArstilaOlli TarvainenTimo SajavaaraKristian WeibyeMari NapariØYstein FjellvågOla NilsenJaakko JulinJaakko JulinSami Kinnunensubject
010302 applied physicsMaterials scienceAcoustics and UltrasonicsCapacitive sensingAnalytical chemistry02 engineering and technologyPlasma021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesSpectral lineSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAtomic layer depositionCrystallinity0103 physical sciencesDeposition (phase transition)plasma modesCapacitively coupled plasmaRadio frequency0210 nano-technologyplasma-enhanced atomic layer depositiondescription
Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In remote CCP operations the transition to the γ mode can result in a parasitic discharge leading to uncontrollable film growth and thus limit the operation parameters of the capacitive discharge in the PEALD applications. © 2017 IOP Publishing
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-02-03 |