Boron doping of silicon rich carbides: Electrical properties

6533b857fe1ef96bd12b473d

RESEARCH PRODUCT

Boron doping of silicon rich carbides: Electrical properties

C. Summonte M. Canino M. Allegrezza M. Bellettato A. Desalvo R. Shukla B I.p. Jain I. Crupic S. Milita L. Ortolani L. Lópezconesa S. Estradé F. Peiró B. Garrido

subject

Silicon nanodot Materials science Silicon Silicon dioxide Boron doping Inorganic chemistry chemistry.chemical_element Silicon carbide 02 engineering and technology Settore ING-INF/01 - Elettronica 7. Clean energy 01 natural sciences Settore FIS/03 - Fisica Della Materia Carbide chemistry.chemical_compound UV-vis reflection and transmittance Multilayer 0103 physical sciences Silicon carbide General Materials Science Electrical measurements Silicon rich carbide 010302 applied physics Dopant business.industry Mechanical Engineering Doping Fourier transform infrared spectroscopy Silica 021001 nanoscience & nanotechnology Condensed Matter Physics Silicon rich Optical propertie Electrical transport chemistry Mechanics of Materials UV-vis reflection and transmittance Doping (additives)Boron-doping Optoelectronics Electric propertie Nanodot 0210 nano-technology business X ray diffraction Boron carbide

description

Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarkable higher room temperature dark conductivity is obtained in the multilayer that includes a boron doped well, rather than boron doped barrier, indicating efficient doping in the former case. Room temperature lateral dark conductivity up to 10-3 S/cm is measured on the multilayer with boron doped barrier and well. The result compares favorably with silicon dioxide and makes SiC encouraging for application in photovoltaic devices. © 2012 Elsevier B.V. All rights reserved.

year	journal	country	edition	language
2013-05-01	Materials Science and Engineering: B

https://doi.org/10.1016/j.mseb.2012.10.030