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RESEARCH PRODUCT
A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics
Aldo SaavedraG. F. MoorheadA. GreenallVal O'sheaD. RobinsonD. MorganYoshinobu UnnoPhillip AllportLadislav AndricekMarco CostaTim JonesJ. C. HillH. F-w. SadrozinskiJ. R. CarterN. A. SmithPetra RiedlerPhilip PhillipsSteinar StapnesM. J. GoodrickT. DubbsJavier SánchezSusumu TeradaC. RaineCraig ButtarL. Dragesubject
PhysicsNuclear and High Energy PhysicsLarge Hadron ColliderPhysics::Instrumentation and Detectorsbusiness.industryATLAS experimentDetectorBiasingSemiconductor deviceParticle detectorMicrostripSemiconductor detectorOptoelectronicsHigh Energy Physics::ExperimentbusinessInstrumentationdescription
Abstract Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×10 14 p cm −2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-08-01 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |