6533b859fe1ef96bd12b76d3
RESEARCH PRODUCT
Twofold coordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2
Stefania GrandiRoberto BoscainoFranco Mario GelardiAldo MagistrisAntonino AlessiSimonpietro Agnellosubject
PhotoluminescenceMaterials sciencesistemi amorfi difetti di puntoRadiationIonizing radiationlaw.inventionOpticsPhotosensitivitylawFiber Optic TechnologyComputer SimulationIrradiationElectron paramagnetic resonanceGe defectsLightingbusiness.industryGermaniumGamma rayEquipment DesignModels TheoreticalSilicon DioxideAtomic and Molecular Physics and OpticsAmorphous solidEquipment Failure AnalysisGamma Raysgamma-ray irradiationComputer-Aided DesignSiO2businessdescription
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern writing through ionizing radiation.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-01-01 |