6533b85bfe1ef96bd12bace3
RESEARCH PRODUCT
Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
Julien DugayRamón Torres-cavanillasAnastasia HolovchenkoEugenio CoronadoHerre S. J. Van Der ZantMónica Giménez-marquéssubject
Materials scienceBistabilityGrapheneMechanical EngineeringNanoparticleConductanceMolecular electronicsNanotechnologyCharge (physics)02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceslaw.inventionMechanics of MaterialslawSpin crossoverSio2 nanoparticlesGeneral Materials Science0210 nano-technologydescription
The charge transport properties of SCO [Fe(Htrz)2 (trz)](BF4 ) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-02-15 | Advanced Materials |