6533b85cfe1ef96bd12bcb52

RESEARCH PRODUCT

Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

Bruno DaudinAna CrosAlbert MinjNúria GarroT. AuzelleJaime Colchero

subject

Kelvin probe force microscopePolarity (physics)ChemistryMechanical EngineeringSurface photovoltageNanowireBioengineeringNanotechnologyGeneral ChemistryCondensed Matter Physics[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Characterization (materials science)Condensed Matter::Materials Sciencesymbols.namesakeMicroscopysymbols[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]General Materials Sciencevan der Waals forcePhotoconductive atomic force microscopyComputingMilieux_MISCELLANEOUS

description

In this work, we demonstrate the capabilities of atomic force microscopies (AFMs) for the nondestructive determination of the polarity of GaN nanowires (NWs). Three complementary AFMs are analyzed here: Kelvin probe force microscopy (KPFM), light-assisted KPFM, and piezo-force microscopy (PFM). These techniques allow us to assess the polarity of individual NWs over an area of tens of μm(2) and provide statistics on the polarity of the ensemble with an accuracy hardly reachable by other methods. The precise quantitative analysis of the tip-sample interaction by multidimensional spectroscopic measurements, combined with advanced data analysis, has allowed the separate characterization of electrostatic and van der Waals forces as a function of tip-sample distance. Besides their polarity, the net surface charge density of individual NWs was estimated.

https://hal.science/hal-02016574