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RESEARCH PRODUCT

Seed layer technique for high quality epitaxial manganite films

P. GraziosiA. GambardellaM. CalbucciK. O'sheaD.a. MaclarenA. RiminucciI. BergentiS. FugattiniM. PreziosoN. HomonnayG. SchmidtD. PulliniD. Busquets-mataixV. Dediu

subject

Materials scienceFerromagnetic material propertiesDielectrophoresisGeneral Physics and AstronomyMagnetic filmsNanotechnology02 engineering and technologySubstrate (electronics)Epitaxy01 natural sciencesNOPhysics and Astronomy (all)0103 physical sciencesThin film growthThin film010306 general physicsDeposition (law)business.industry021001 nanoscience & nanotechnologyManganitelcsh:QC1-999X-ray diffractionChemical stateOptoelectronics0210 nano-technologybusinessLayer (electronics)lcsh:PhysicsRegular ArticlesEpitaxy

description

We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

10.1063/1.4961228https://doaj.org/article/2dc1184035924bae843ee52e4fc13115